Low‐energy separation by implantation of oxygen structures via plasma source ion implantation
نویسندگان
چکیده
منابع مشابه
Separation by Plasma Implantation of Oxygen (SPIMOX) Operational Phase Space
Separation by plasma implantation of oxygen (SPIMOX) has been suggested as an economic alternative for separation by implantation of oxygen (SIMOX) to form the silicon-oninsulator (SOI) structure. The chief advantage of SPIMOX is the high throughput and low-cost implanter. The operation regime of implantation for SPIMOX, which uses dc plasma immersion ion implantation (PIII) for the oxygen impl...
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Plasma Source Ion Implantation (PSII) is an emerging technology which can be used to harden metal surfaces in a conformal manner. North Star Research Corp. (NSRC) is building a unique implanter system for Empire Hard Chrome which will be the first truly commercial implanter of this type. The choice of pulsed power technology for this application is important from the standpoint of both reliabil...
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Experiments are reported in which two configurations for ablation-plasma-ion-implantation ~APII! are characterized by diagnostics and compared. The first configuration oriented the target parallel to the deposition substrate. This orientation yielded ion-beam-assisted deposition of thin films. A delay (.5 ms) between laser and high voltage was necessary for this geometry to avoid arcing between...
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Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
متن کاملCorrosion and wear-corrosion behavior of NiTi modified by plasma source ion implantation.
The understanding of corrosion behavior in NiTi is critical for the devices using this shape-memory alloy. In order to improve the surface properties of NiTi such as corrosion resistance, plasma source ion implantation (PSII) technique was employed with oxygen as incident ions at three levels of implantation dose (5x10(16), 1x10(17) and 3x10(17) ions/cm(-2)). Pitting corrosion and wear-corrosio...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1994
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.112162